来源：深圳市凯弘源科技有限公司 发布时间：2009-4-16 15:50:17
浏览点击数：1911
MRF9100R3的产品特征：
• On–Die Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts (Typ)
Power Gain @ P1dB — 16.5 dB (Typ)
Efficiency @ P1dB — 53% (Typ)
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9100R3的技术参数：
| Rating |
Symbol |
Value |
Unit |
| Drain–Source Voltage |
VDSS
|
65 |
Vdc |
| Gate–Source Voltage |
VGS |
- 0.5,+15 |
Vdc |
Total Device Dissipation @ TC = 25℃
Derate above 25℃ |
PD |
175
1.0 |
Watts
W/℃ |
| Storage Temperature Range |
Tstg |
–65 to +200 |
℃ |
| Operating Junction Temperature |
TJ |
200 |
℃ |
MRF9100R3的产品描述：
Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.
