MRF9130LSR3的产品特征：
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB - 135 Watts
Power Gain - 16.5 dB @ 130 Watts Output Power
Efficiency - 48% @ 130 Watts Output Power
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9130LSR3的技术参数：
| Rating |
Symbol |
Value |
Unit |
| Drain–Source Voltage |
VDSS
|
65 |
Vdc |
| Gate–Source Voltage |
VGS |
- 0.5, +15 |
Vdc |
Total Device Dissipation @ TC = 25℃
Derate above 25℃ |
PD |
298
1.7 |
Watts
W/℃ |
| Storage Temperature Range |
Tstg |
–65 to +200 |
℃ |
| Operating Junction Temperature |
TJ |
200 |
℃ |
MRF9130LSR3的产品描述：
Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large- signal, common-source amplifier applications in 28 volt base station equipment.
