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MRF914的产品特征:
· Silicon NPN, high Frequency, To-72 packaged, Transistor
· High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz
· Low Noise Figure
NF = 2.5 dB (typ) @ f = 500 MHz
· High FT - 4.5 GHz (typ) @ IC = 20 mAdc
MRF914的技术参数:
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
12
Vdc
VCBO
Collector-Base Voltage
20
Vdc
VEBO
Emitter-Base Voltage
3.0
Vdc
IC
Collector Current
40
mA
MRF914的产品描述:
Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications.